Hitachi Metals, Ltd. (head office: Minato-ku, Tokyo, President: Akitoshi Hiraki, hereinafter, “the Company”) hereby announces that it will reinforce and expand the Information System Component Business by undertaking part of manufacturing processes of SiC (silicon carbide)^*1 power semiconductor^*2 wafers from ROHM Co., Ltd. (head office: Kyoto-shi, Kyoto, President: Satoshi Sawamura). The Company will respond to rapid growth in demand by using its Yamazaki Works (Shimamoto-cho, Mishima-gun, Osaka) as a manufacturing base with a geographical advantage.

Compared with Si power semiconductors, the current mainstream technology, SiC power semiconductors can significantly diminish energy loss in power converters and inverters. This technology makes miniaturization and achievement of lighter weight possible for power conversion apparatus. With these advantages, demand for SiC power semiconductors is expected to grow in the future in various fields including power transmission systems, trains, electric vehicles (EVs), hybrid electric vehicles (HEVs) and industrial equipment.

The Company’s Information System Component Business is engaged in the development and manufacturing of ceramic materials for a wide range of applications such as medical, communication and automotive use. Given such track record, we will undertake a part of the manufacturing process (polishing) for SiC power semiconductor wafers by leveraging the manufacturing technologies we have accumulated to date. It is our plan to utilize the Company’s Yamazaki Works—which has been used for the manufacturing of information system components—as a manufacturing base.

The Company will endeavor to achieve sustainable growth of the Information System Component Business by continuing to concentrate on areas with future growth potential.

For inquiries from the press:
Corporate Communications, Hitachi Metals, Ltd.
hmcc.sa@hitachi-metals.com